Mr. Ashikul Haque Naeem | Semiconductor Devices | Editorial Board Member

Published on by Superior Awards

Mr. Ashikul Haque Naeem | Semiconductor Devices | Editorial Board Member

Mr. Ashikul Haque Naeem | Bangladesh University of Engineering and Technology | Bangladesh

Mr.  Ashikul Haque Naeem is an emerging materials researcher with strong academic and scientific credentials in nanomaterials, glass, and ceramic engineering, with a growing focus on high-performance transparent conducting oxides and functional thin films. His work centers on the synthesis, dual-doping, and characterization of CdO-based thin films, aiming to tailor their structural, morphological, optical, and electrical properties for applications in photovoltaics, touch-screen displays, sensors, and advanced optoelectronic devices. He has authored peer-reviewed publications in Materials Advances and Heliyon, where he investigates the effects of Ag-Co, Ag-Fe, Ag-Al, and Al-Zn co-doping on optoelectronic behavior using spray pyrolysis and related fabrication techniques. His research has been showcased at multiple international conferences in physics, electronics, and informatics, presenting insights into bandgap tuning, carrier concentration modulation, and performance optimization of doped CdO systems. His work earned the Best Poster Presentation Award at the International Conference on Physics-2024, reflecting the significance and quality of his contributions. Supported by academic scholarships and a strong background in advanced ceramics, materials characterization, nanotechnology, and glass technology, M Ashikul Haque Naeem continues to build a promising trajectory as a researcher contributing to the advancement of next-generation functional materials and optoelectronic technologies.

Profiles: Orcid | Google Scholar

Featured Publications

  • Naeem, M. A. H., Ayon, A. S. R., Ali, M. M., Amin, M. R., Kabir, M. H., Sattar, M. A., … (2024). Insights into the consequence of (Al–Zn) dual-doping on structural, morphological, and optoelectrical properties of CdO thin films. Heliyon, 10(4).

  • Karim, I., Naeem, M. A. H., Ayon, A. S. R., Sattar, M. A., Sabur, M. A., & Ahmed, A. N. (2025). Effect of silver and cobalt on transparent conducting CdO thin films: Tuning the optoelectronic properties. Materials Advances, 6(2), 703–718.

  • Karim, I., Rokon, S. M. N., Naeem, M. A. H., Robin, I. K., Ahmed, A. N., Sattar, M. A., … (2025). Tunable semiconducting behavior and linear–nonlinear optical properties of Ag–Sn dual-doped nanocrystalline CdO thin films for optoelectronics. ACS Omega.

Mr. Vagif Salmanov | Semiconductor Devices | Best Researcher Award

Published on by Superior Awards

Mr. Vagif Salmanov | Semiconductor Devices | Best Researcher Award

Mr. Vagif Salmanov | Baku State University | Baku State University

Mr. Vagif Salmanov, Doctor of Physical and Mathematical Sciences, is a leading expert in semiconductor physics and laser optics at Baku State University, where he serves as Professor and Head of the Department of Semiconductor Physics. His professional career, spanning over five decades, has been dedicated to research and teaching in the field of semiconductor materials, focusing on optical, photoelectric, and luminescent properties of layered compounds under high optical excitation. His scientific achievements include pioneering studies on nonlinear and nonequilibrium processes in A₃B₆-type semiconductors, the discovery of photoluminescence from deep zones caused by hyperbolic excitons, and investigations into harmonic generation, two-photon absorption, and optical bistability. Professor Salmanov has published over 170 scientific papers and supervised seven PhD candidates, contributing significantly to the development of modern semiconductor and laser physics in Azerbaijan. As Chairman of the Expert Commission on Physics at the Higher Attestation Commission under the President of Azerbaijan and Scientific Secretary of the Academic Council at Baku State University, he plays an influential role in academic leadership and research evaluation. His scientific record includes 162 citations by 145 documents, 61 publications, and an h-index of 6, demonstrating his lasting contribution to advanced physical sciences.

Profile: Scopus | Orcid

Featured Publications

  • Salmanov, V. M., et al. (2025). Nonlinear optical phenomena in InSe nanoparticles obtained by laser ablation in a liquid. Semiconductors, 2025.

  • Salmanov, V. M., et al. (2025). Photophysical properties of Ga₀.₉₅B₀.₀₅Se crystals: Photoconductivity and photoluminescence studies. Journal of Luminescence, 2025.

  • Salmanov, V. M., et al. (2024). Optical properties of GaS nanoparticles prepared by laser ablation. Physics of the Solid State, 2024.

  • Salmanov, V. M., et al. (2024). Synthesis of CdSTe nanoparticles by laser ablation. Nanosystems: Physics, Chemistry, Mathematics, 2024.

  • Salmanov, V. M., et al. (2024). Nonlinear transmission and photoluminescence of colloidal solutions of indium-selenide-based nanocrystals. Semiconductors, 2024.

  • Salmanov, V. M., et al. (2024). CdS nanoparticles synthesized by laser ablation in liquid. Semiconductors, 2024.

 

Dr. Sekhar Reddy Kola | Semiconductor Devices | Best Researcher Award

Published on by Superior Awards

Dr. Sekhar Reddy Kola | Semiconductor Devices | Best Researcher Award

Dr. Sekhar Reddy Kola | National Yang Ming Chiao Tung University | Taiwan

Dr. Sekhar Reddy Kola is a distinguished Postdoctoral Fellow at the National Yang Ming Chiao Tung University, Taiwan, with a Ph.D. in Electrical and Computer Engineering, specializing in semiconductor devices. His doctoral research, under the supervision of Professor Yiming Li, focused on the process variation effects and intrinsic parameter fluctuations of vertically stacked gate-all-around silicon nanosheet complementary field-effect transistors. His expertise spans advanced semiconductor device physics and modeling, including gate-all-around nanosheet and nanowire metal-oxide-semiconductor field-effect transistors, negative capacitance field-effect transistors, and complementary field-effect transistor circuit and static random-access memory designs. Dr. Kola’s work integrates statistical modeling, data analysis, and machine learning for performance optimization and variability analysis in nanoscale devices. With proficiency in technology computer-aided design, finite element method modeling, and quantum transport models, he has conducted extensive simulations related to process engineering, doping profiles, and stress effects. His research contributions also extend to radio frequency, reliability, and S-parameter analyses, highlighting his deep understanding of both theoretical and experimental semiconductor design. His research output includes 33 documents with 311 citations by 192 documents and an h-index of 10, reflecting the global recognition of his impactful scientific contributions. A recipient of the Best Paper Award at IEDMS in 2018 and the Outstanding Foreign Student Scholarship from 2017 to 2022, Dr. Kola exemplifies excellence in nanoelectronics and semiconductor innovation.

Profile : Scopus | Google Scholar

Featured Publications

Sreenivasulu, V. B., Neelam, A. K., Kola, S. R., Singh, J., & Li, Y. (2023). Exploring the performance of 3-D nanosheet FET in inversion and junctionless modes: Device and circuit-level analysis and comparison. IEEE Access, 11, 90421–90429.

Yang, Y. S., Li, Y., & Kola, S. R. R. (2023). A physical-based artificial neural networks compact modeling framework for emerging FETs. IEEE Transactions on Electron Devices, 71(1), 223–230.

Butola, R., Li, Y., & Kola, S. R. (2022). A machine learning approach to modeling intrinsic parameter fluctuation of gate-all-around Si nanosheet MOSFETs. IEEE Access, 10, 71356–71369.

Kola, S. R., & Thoti, N. (2020). Characteristics of gate-all-around silicon nanowire and nanosheet MOSFETs with various spacers. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 26.

Kola, S. R., Li, Y., & Thoti, N. (2020). Effects of spacer and single-charge trap on voltage transfer characteristics of gate-all-around silicon nanowire CMOS devices and circuits. 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), 217–220.

Yu, X. R., Chuang, M. H., Chang, S. W., Chang, W. H., Hong, T. C., Chiang, C. H., … Kola, S. R. (2022). Integration design and process of 3-D heterogeneous 6T SRAM with double layer transferred Ge/2Si CFET and IGZO pass gates for 42% reduced cell size. 2022 International Electron Devices Meeting (IEDM), 20.5.1–20.5.4.