Dr. Sekhar Reddy Kola | Semiconductor Devices | Best Researcher Award

Dr. Sekhar Reddy Kola | Semiconductor Devices | Best Researcher Award

Dr. Sekhar Reddy Kola | National Yang Ming Chiao Tung University | Taiwan

Dr. Sekhar Reddy Kola is a distinguished Postdoctoral Fellow at the National Yang Ming Chiao Tung University, Taiwan, with a Ph.D. in Electrical and Computer Engineering, specializing in semiconductor devices. His doctoral research, under the supervision of Professor Yiming Li, focused on the process variation effects and intrinsic parameter fluctuations of vertically stacked gate-all-around silicon nanosheet complementary field-effect transistors. His expertise spans advanced semiconductor device physics and modeling, including gate-all-around nanosheet and nanowire metal-oxide-semiconductor field-effect transistors, negative capacitance field-effect transistors, and complementary field-effect transistor circuit and static random-access memory designs. Dr. Kola’s work integrates statistical modeling, data analysis, and machine learning for performance optimization and variability analysis in nanoscale devices. With proficiency in technology computer-aided design, finite element method modeling, and quantum transport models, he has conducted extensive simulations related to process engineering, doping profiles, and stress effects. His research contributions also extend to radio frequency, reliability, and S-parameter analyses, highlighting his deep understanding of both theoretical and experimental semiconductor design. His research output includes 33 documents with 311 citations by 192 documents and an h-index of 10, reflecting the global recognition of his impactful scientific contributions. A recipient of the Best Paper Award at IEDMS in 2018 and the Outstanding Foreign Student Scholarship from 2017 to 2022, Dr. Kola exemplifies excellence in nanoelectronics and semiconductor innovation.

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Featured Publications

Sreenivasulu, V. B., Neelam, A. K., Kola, S. R., Singh, J., & Li, Y. (2023). Exploring the performance of 3-D nanosheet FET in inversion and junctionless modes: Device and circuit-level analysis and comparison. IEEE Access, 11, 90421–90429.

Yang, Y. S., Li, Y., & Kola, S. R. R. (2023). A physical-based artificial neural networks compact modeling framework for emerging FETs. IEEE Transactions on Electron Devices, 71(1), 223–230.

Butola, R., Li, Y., & Kola, S. R. (2022). A machine learning approach to modeling intrinsic parameter fluctuation of gate-all-around Si nanosheet MOSFETs. IEEE Access, 10, 71356–71369.

Kola, S. R., & Thoti, N. (2020). Characteristics of gate-all-around silicon nanowire and nanosheet MOSFETs with various spacers. 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 26.

Kola, S. R., Li, Y., & Thoti, N. (2020). Effects of spacer and single-charge trap on voltage transfer characteristics of gate-all-around silicon nanowire CMOS devices and circuits. 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), 217–220.

Yu, X. R., Chuang, M. H., Chang, S. W., Chang, W. H., Hong, T. C., Chiang, C. H., … Kola, S. R. (2022). Integration design and process of 3-D heterogeneous 6T SRAM with double layer transferred Ge/2Si CFET and IGZO pass gates for 42% reduced cell size. 2022 International Electron Devices Meeting (IEDM), 20.5.1–20.5.4.

Dr. Vaishali Dhare | Semiconductor Devices | Best Researcher Award

Dr. Vaishali Dhare | Semiconductor Devices | Best Researcher Award

Dr. Vaishali Dhare | Nirma University | India

Dr. Vaishali Dhare is a distinguished academic and researcher in the field of microelectronics and advanced circuit design. She serves as an Assistant Professor at the Institute of Technology, Nirma University, Ahmedabad, where she has built a long and dedicated career in teaching and research. Her primary expertise lies in electronic design automation, circuit testing, and defect analysis for next-generation computing systems. She has authored several impactful research papers published in internationally reputed journals. Known for her commitment to innovation and academic excellence, Dr. Dhare continues to inspire students and contribute significantly to advancements in electronic systems and nanotechnology.

Professional Profile

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Education and Experience

Dr. Vaishali Dhare completed her doctoral studies in the area of electronic design and testing at Nirma University, Ahmedabad. She pursued her master’s degree in design of integrated circuits at the same university and earned her bachelor’s degree in electronics and telecommunication from North Maharashtra University. Her academic foundation began with a diploma in electrical engineering from the Board of Technical Education in Maharashtra. She has an extensive teaching career, beginning as a lecturer in Maharashtra before joining Nirma University, where she continues to serve as an Assistant Professor. Her journey reflects her strong academic grounding and commitment to education.

Summary Suitability

Dr. Vaishali Dhare stands out as a highly suitable candidate for the Best Researcher Award owing to her extensive academic career, impactful research, and significant contributions in the field of electronic design and emerging nanotechnology. With over two decades of teaching and research experience at Nirma University, Ahmedabad, she has built a strong reputation as both a dedicated educator and an innovative researcher. Her scholarly work bridges the gap between theoretical circuit design and practical applications in microelectronics, making her an influential figure in her discipline.

Professional Development

Dr. Vaishali Dhare has actively engaged in continuous professional development through research, academic collaborations, and participation in faculty development programs, seminars, and workshops. She has contributed to advancing the field of electronic design by addressing challenges related to testing, fault tolerance, and defect detection in microelectronic systems. Her research has been published in internationally recognized journals, reflecting both academic rigor and practical application. By blending her teaching with innovative research, she has enhanced her expertise in electronic design automation and nanotechnology. Dr. Dhare continues to evolve as a thought leader in her field, driving innovation and shaping future professionals.

Research Focus

Dr. Vaishali Dhare’s research focus is on electronic design and emerging technologies in circuit systems. She specializes in testing methodologies, fault modeling, and defect analysis that aim to improve the reliability of microelectronics and nanotechnology-based designs. Her work explores issues related to design efficiency, optimization, and robustness of advanced computing devices. She has proposed new approaches for identifying and addressing defects, as well as enhancing the accuracy of circuit testing methods. Through her contributions, Dr. Dhare bridges theoretical research with real-world application, offering solutions that strengthen the reliability and performance of next-generation electronic and computational technologies.

Awards and Honors

Dr. Vaishali Dhare has earned recognition through her scholarly contributions published in leading international journals. Her achievements reflect her commitment to excellence in teaching, research, and academic service. She has been acknowledged for her innovative approaches to electronic design and for her dedication to student mentorship. Her long-standing role at Nirma University and her distinction throughout her education further highlight her accomplishments. While specific awards are not listed, Dr. Dhare’s recognition lies in the impact of her academic work, her contribution to the advancement of microelectronics, and her role as a respected educator and researcher.

Publication Top Notes

Title: Quantum-dot cellular automata: a survey
Year: 2017
Citations: 30

Title: Defect characterization and testing of quantum-dot cellular automata devices and circuits: A survey
Year: 2015
Citations: 22

Title: Multiple missing cell defect modeling for quantum-dot cellular automata devices
Year: 2018
Citations: 12

Title: A simple synthesis process for combinational quantum-dot cellular automata circuits: QSynthesizer
Year: 2019
Citations: 10

Title: Development of basic fault model and corresponding test pattern generation for single input missing cell deposition defects in majority voter of quantum-dot cellular automata
Year: 2016
Citations: 9

Title: Fault analysis of quantum-dot cellular automata combinational circuit at layout and logic level
Year: 2015
Citations: 9

Title: Development of controllability observability aided combinational test pattern generation with fault reduction
Year: 2010
Citations: 7

Conclusion

With her proven research excellence, impactful publications, and long-standing academic service, Dr. Vaishali Dhare exemplifies the qualities that the Best Researcher Award seeks to honor. Her dedication to advancing electronic design automation and her substantial contributions to defect analysis in nanotechnology establish her as a deserving candidate for this recognition.